Efficient Improvement of Hot-Carrier-Induced Devices Degradation for Sub-0.1 μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
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Efficient Improvement of Hot-Carrier-Induced Devices Degradation for Sub-0.1 μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
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Abstract
The effect of post-thermal annealing (PA) after In-halo and As-halo implantation on the reliability of sub-0.1 μm complementary metal-oxide-semiconductor field-effect-transistors was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving hot-carrier-induced devices degradation. The optimal results of device performance as well as of reliability can be obtained with post-annealing treatment performed at medium temperatures (e.g., 900°C) for a longer time. © 2004 The Japan Society of Applied Physics
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J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>CMOS integrated circuits</term><term>Experimental study</term><term>Hot carriers</term><term>Indium</term><term>MOSFET circuits</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>8530D</term><term>Etude expérimentale</term><term>Circuit MOSFET</term><term>Circuit intégré CMOS</term><term>Porteur chaud</term><term>Indium</term><term>Recuit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of post-thermal annealing (PA) after In-halo and As-halo implantation on the reliability of sub-0.1 μm complementary metal-oxide-semiconductor field-effect-transistors was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving hot-carrier-induced devices degradation. The optimal results of device performance as well as of reliability can be obtained with post-annealing treatment performed at medium temperatures (e.g., 900°C) for a longer time. © 2004 The Japan Society of Applied Physics</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. 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